| PART |
Description |
Maker |
| GS816218BB-250I GS816236BB-200 GS816236BB-150 GS81 |
1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs
|
http://
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| GS816236BGB-250V GS816218BGB-200V GS816236BGB-150V |
1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PBGA119
1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs 1M X 18 CACHE SRAM, 6.5 ns, PBGA119
1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA119
|
GSI Technology, Inc.
|
| CY7C1387F-167BGC CY7C1387F-167BGI CY7C1387F-167BGX |
Replacement for Intersil part number 8100604EA. Buy from authorized manufacturer Rochester Electronics.
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 18兆位（为512k × 36 / 1兆位× 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor Corp.
|
| GS8322V18GB-166I GS8322V18GB-225 GS8322V18GE-225I |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 7 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 7 ns, PBGA165
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 7 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 512K X 72 CACHE SRAM, 8 ns, PBGA209
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 8.5 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 512K X 72 CACHE SRAM, 8.5 ns, PBGA209
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 512K X 72 CACHE SRAM, 7.5 ns, PBGA209
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 8.5 ns, PBGA165
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 8 ns, PBGA165
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 6.5 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 7 ns, PBGA165
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 8 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 8.5 ns, PBGA165
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 2M X 18 CACHE SRAM, 8 ns, PBGA119
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 1M X 36 CACHE SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
|
| ICY7C1387C-167BGI CY7C1386C CY7C1386C-167AC CY7C13 |
18-Mb (512K x 36/1M x 18) Pipelined DCD Sync SRAM
|
CYPRESS[Cypress Semiconductor]
|
| CY7C1366B-200BZI ICY7C1367B-166BGI CY7C1366B CY7C1 |
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM
|
CYPRESS[Cypress Semiconductor]
|
| CY7C1366C-225AXC CY7C1366C-225AXI CY7C1366C-225BGC |
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
|
CYPRESS[Cypress Semiconductor]
|
| CY7C1386F-167BGXC CY7C1386F-167BGXI CY7C1386F-200B |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR
4M (512K X 8) BIT
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
512K X 16 FLASH 3V PROM, 90 ns, PDSO48
512K X 16 FLASH 3V PROM, 70 ns, PBGA48
512K X 16 FLASH 3V PROM, 90 ns, PBGA48
512K X 16 FLASH 3V PROM, 120 ns, PDSO48
512K X 16 FLASH 3V PROM, 120 ns, PDSO44
512K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Spansion, Inc.
SPANSION LLC
|
| CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 |
512K x 36 pipelined SRAM, 167MHz
512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100
512K x 36 pipelined SRAM, 225MHz
|
Cypress Semiconductor, Corp.
|
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